BC817K-25R Datasheet

BC817K-40R

Datasheet specifications

Datasheet's name BC817K-40R
File size 39.848 KB
File type pdf
Number of pages 24

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BC817K-25R
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
  • Package: SOT-23(TO-236)
  • Manufacturer: Nexperia

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